Infineon FP40R12KE3 | High-Frequency 1200V Four-Pack IGBT Module
The Infineon FP40R12KE3 is an expertly engineered 1200V, 40A IGBT module designed for power conversion systems where efficiency, power density, and reliability are non-negotiable. By integrating a full H-bridge (four-pack) configuration into the industry-standard EconoPACK™ 2 package, this module provides a streamlined solution for engineers developing compact and high-performance inverters and converters.
- Integrated H-Bridge Topology: Simplifies system layout, reduces component count, and minimizes stray inductance for cleaner switching performance.
- TRENCHSTOP™ IGBT3 Technology: Delivers an optimized balance between low conduction losses (VCE(sat)) and reduced switching losses, making it ideal for applications operating in the medium to high-frequency range.
- High Thermal Performance: Housed in the robust EconoPACK™ 2 package with an integrated NTC thermistor for precise, real-time temperature monitoring, enabling robust thermal management.
- Proven Reliability: Built on Infineon's extensive experience, this module is designed for long service life in demanding industrial environments.
Technical Deep Dive: The Engineering Edge
The performance of the FP40R12KE3 is rooted in two core design choices: its silicon technology and its integrated topology. Understanding these provides a clear picture of its application advantages.
First, the module employs Infineon TRENCHSTOP™ IGBT3 technology. Unlike earlier generations that forced a hard trade-off between conduction and switching losses, IGBT3 was engineered for a "sweet spot." It offers a low VCE(sat) of 2.0V (typical), which directly reduces heat dissipation during the on-state. This is critical in applications with high duty cycles. Simultaneously, it maintains fast and controlled switching characteristics, minimizing energy loss during turn-on and turn-off transitions. This balance is fundamental for achieving high efficiency in systems switching between 8 kHz and 30 kHz.
Second, the four-pack (H-bridge) configuration is a significant design accelerator. Building an H-bridge from four discrete IGBTs requires careful PCB layout to manage parasitic inductance and ensure symmetrical current sharing. The FP40R12KE3 solves this by co-packaging the four IGBTs and four freewheeling diodes in an optimized layout. This not only shrinks the overall footprint but also reduces loop inductance, which mitigates voltage overshoots and ringing during high-speed switching, simplifying the design of snubber circuits and improving electromagnetic compatibility (EMC).
Key Parameter Overview
The following specifications are critical for system design and simulation. For a comprehensive list of characteristics, please download the official FP40R12KE3 datasheet.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (Vces) | 1200 V |
| Continuous Collector Current (Ic @ Tc=80°C) | 40 A |
| Collector-Emitter Saturation Voltage (VCE(sat), typ. @ 40A, 25°C) | 2.0 V |
| Total Switching Energy (Ets, typ. @ 40A, 125°C) | 6.5 mJ |
| Package Type | EconoPACK™ 2 |
| Integrated Features | NTC Thermistor |
Application Scenarios & Value Proposition
The unique features of the Infineon FP40R12KE3 translate directly into tangible benefits across several key applications:
- Solar Inverters: In residential or small commercial solar installations, the H-bridge is the core topology for DC-to-AC conversion. The FP40R12KE3's high efficiency ensures maximum energy harvest (MPPT), while its compact form factor enables smaller, lighter inverter designs. Further explore how IGBTs are the linchpin of high-efficiency inverter ACs.
- Uninterruptible Power Supplies (UPS): System uptime is paramount. The proven reliability of Infineon's IGBT3 and the integrated thermal monitoring provide the dependability required for critical backup power systems. The low-loss operation also reduces cooling requirements and operational costs.
- Welding Power Supplies: Modern welding equipment relies on high-frequency inverter technology for precise arc control. The fast and efficient switching capability of the FP40R12KE3 allows for advanced welding processes, improved material penetration, and higher overall power efficiency.
Frequently Asked Questions (FAQ)
Q: How does the integrated NTC thermistor improve my design?
A: The NTC provides a direct, real-time measurement of the module's baseplate temperature. This data is invaluable for the system controller. It can be used to implement over-temperature protection (OTP) to prevent catastrophic failure, trigger dynamic thermal management (like adjusting fan speed), or log data for predictive maintenance, ultimately extending the service life of both the IGBT module and the end application.
Q: What are the key considerations when designing the gate drive for the FP40R12KE3?
A: As with any TRENCHSTOP™ IGBT3, a proper gate drive is essential. A recommended gate voltage of +15V for turn-on and a negative voltage (typically -8V to -15V) for turn-off is advised. The negative gate voltage ensures a robust off-state, especially in noisy environments, preventing parasitic turn-on. The EconoPACK™ 2 package provides auxiliary emitter connections that should be used as the Kelvin Emitter return path for the gate driver to minimize the impact of load current-induced voltage drops on the gate signal.
For engineers seeking a powerful, integrated, and reliable solution for power conversion up to approximately 20 kW, the Infineon FP40R12KE3 represents a strategically sound choice. If you require assistance in selecting from our wide range of IGBT modules or need a custom solution, please contact our technical team for expert guidance.
