Infineon FZ1600R12KF4_S1 IGBT Module

Infineon FZ1600R12KF4_S1 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for power electronic applications. FZ1600R12KF4_S1 consists of two IGBTs in a half-bridge configuration and comes with a fast and soft freewheeling diode.

The FZ1600R12KF4_S1 module has voltage rating 1200V & current rating 1600A, suitable motor drives, renewable energy systems, and industrial inverters.

One of the key features of FZ1600R12KF4_S1 is its low-loss design, which results in higher efficiency and lower thermal stress.

Infineon FZ1600R12KF4_S IGBT: 

Maximum Rated Values

Collector-emitter voltage Tvj = 25°C VCES 1200 V

Continuous DC collectorcurrent TC = 60°C, Tvj max = 150°C IC nom IC 600A

Repetitive peak collector current tp = 1 ms ICRM 1200 A

Total power dissipation TC = 25°C, Tvj max = 150 Ptot 3900 W

Gate-emitter peak voltage VGES +/-20 V

Temperature under switching conditions Tvj op -40 125 °C

Storage temperature Tstg -40 125 °C

Gewicht Weight G 340 g