Content last revised on November 21, 2025
FZ1200R16KF4_S1: High-Power 1600V Single Switch IGBT Module
An Engineering-Grade Review of a High-Frequency Power Conversion Workhorse
The FZ1200R16KF4_S1 is a high-power single switch IGBT module engineered to deliver exceptional efficiency and reliability in demanding high-frequency applications. At its core, this module provides robust control over substantial electrical loads, featuring key specifications of 1600V collector-emitter voltage and a nominal collector current of 1200A. Its primary engineering benefits include significantly reduced switching losses and superior thermal performance, which are critical for increasing power density and system longevity. This module directly addresses the challenge of achieving high efficiency in megawatt-scale converters by leveraging advanced semiconductor technology. For systems that demand even greater current handling capacity, the related FZ1800R16KF4_S1 offers a higher current rating within a similar voltage class.
Key Parameter Overview
Decoding the Specs for High-Frequency Switching Performance
The technical specifications of the FZ1200R16KF4_S1 are tailored for applications where both high power and high switching frequency are critical design requirements. The module's performance is defined by a careful balance of static and dynamic characteristics, which together enable efficient and reliable operation under heavy loads. The parameters below highlight the module's capabilities in conduction, switching, and thermal management.
| Parameter | Symbol | Condition | Value |
|---|---|---|---|
| Maximum Ratings | |||
| Collector-Emitter Voltage | V_CES | T_vj = 25°C | 1600 V |
| Continuous Collector Current | I_C nom | - | 1200 A |
| Repetitive Peak Collector Current | I_CRM | t_p = 1 ms | 2400 A |
| Gate-Emitter Voltage | V_GES | - | ±20 V |
| Total Power Dissipation | P_tot | T_C = 25°C, T_vj max = 150°C | 7.80 kW |
| Characteristic Values (IGBT, Chopper) | |||
| Collector-Emitter Saturation Voltage | V_CE sat | I_C = 1200 A, V_GE = 15 V, T_vj = 25°C | 1.90 V (Typ.) / 2.30 V (Max.) |
| Gate Threshold Voltage | V_GE(th) | I_C = 48.0 mA, V_CE = V_GE, T_vj = 25°C | 5.2 V - 6.4 V |
| Turn-On Switching Energy | E_on | I_C = 1200 A, V_CE = 800 V, V_GE = ±15 V, R_G=1.5 Ω, T_vj=125°C | 230 mJ (Typ.) |
| Turn-Off Switching Energy | E_off | I_C = 1200 A, V_CE = 800 V, V_GE = ±15 V, R_G=1.5 Ω, T_vj=125°C | 275 mJ (Typ.) |
| Short Circuit Withstand Time | t_SC | V_GE ≤ 15 V, V_CC = 1000 V, T_vj ≤ 150°C | 10 µs |
| Thermal Characteristics | |||
| Thermal Resistance, Junction to Case | R_thJC | per IGBT | 0.016 K/W |
This table presents a selection of key parameters. It is not exhaustive.
Download the FZ1200R16KF4_S1 datasheet for detailed specifications and performance curves.
Application Scenarios & Value
Enabling Megawatt-Scale Efficiency in Renewable and Industrial Systems
The FZ1200R16KF4_S1 is an optimal choice for high-power systems where efficiency and power density are paramount. Its combination of 1600V blocking voltage and 1200A current capability makes it a robust building block for the next generation of power electronics. For design engineers working on megawatt-class systems, this IGBT module provides the performance necessary to meet stringent efficiency targets and thermal constraints.
A primary high-fidelity engineering scenario for this module is in the power conversion stage of a Wind Turbine Inverter. In this application, the challenge is to convert variable DC voltage from the generator into grid-compliant AC power with minimal energy loss. The FZ1200R16KF4_S1's low collector-emitter saturation voltage (V_CEsat) of 1.90V (typical) directly reduces conduction losses, which constitute a significant portion of the total energy loss in such high-current systems. This efficiency gain translates into more deliverable energy to the grid and a lower operating temperature for the inverter, enhancing the overall system's reliability and return on investment. The module's performance is also critical in large-scale Central Solar Inverters, high-power Variable Frequency Drives (VFDs), and uninterruptible power supplies (UPS), where its robust design ensures stable operation under demanding load cycles.
For applications requiring a different topology or power level, alternatives like the CM600DX-24T provide a dual-switch configuration, which may be more suitable for certain inverter leg designs.
Frequently Asked Questions (FAQ)
How does the low VCE(sat) of the FZ1200R16KF4_S1 translate to real-world system benefits?
The low collector-emitter saturation voltage (V_CEsat) directly reduces the power lost as heat during the IGBT's on-state (conduction phase). This is a critical factor in high-current applications. A lower V_CEsat means less energy is wasted, leading to higher overall inverter efficiency. For system designers, this translates to reduced heatsink size, lower cooling system costs, and a more compact, power-dense final product.
What is the significance of the 1600V collector-emitter voltage rating?
The 1600V rating provides a substantial safety margin for systems operating on DC bus voltages up to approximately 900V-1000V. This makes the module highly suitable for applications connected to 690V AC industrial lines after rectification, as well as for multi-level inverter topologies in medium-voltage drives and large-scale renewable energy systems. The high blocking voltage capability is essential for handling voltage transients and ensuring reliability.
Is this module suitable for paralleling to achieve higher current output?
Yes, IGBT modules like the FZ1200R16KF4_S1 are designed with characteristics that facilitate parallel operation. The positive temperature coefficient of the V_CEsat helps in balancing the current sharing between parallel modules. However, successful IGBT paralleling requires careful gate driver design and a symmetrical busbar layout to minimize stray inductances and ensure simultaneous switching. Following the manufacturer's application notes is crucial for reliable parallel operation.
For sourcing and procurement inquiries regarding the FZ1200R16KF4_S1 and other high-power IGBT modules, please contact our technical sales team for assistance with your specific application requirements.
