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Infineon FS50R12KE3 New IGBT Module

#Infineon, #FS50R12KE3, #IGBT_Module, #IGBT, Infineon IGBT Modules 1200V 50A 3-PHASE

· Categories: IGBT Module
· Manufacturer: Infineon
· Price: US$
· Date Code: 2022+
. Available Qty: 54
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FS50R12KE3 Specification

Sell FS50R12KE3, #Infineon #FS50R12KE3 New Stock, Infineon IGBT Modules 1200V 50A 3-PHASE, #IGBT_Module, #IGBT, #FS50R12KE3
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Manufacturer: Infineon Product Category: IGBT Modules RoHS: Yes Product: IGBT Silicon Modules Maximum Ratings and Characteristics: Absolute maximum ratings (Tc=25°C unless specified otherwise)

  • Collector-Emitter Voltage: 1200 V (at Tvj = 25°C, VCES)
  • Continuous DC Collector Current: 50 A (TC = 100°C, Tvj max = 175°C, IC nom)
  • Repetitive Peak Collector Current: 100 A (tP = 1 ms, ICRM)
  • Total Power Dissipation: 270 W (TC = 25°C, Tvj max = 175°C, Ptot)
  • Gate-Emitter Peak Voltage: ±20V (VGES)
  • Temperature under Switching Conditions: -40 to 150°C (Tvj op)
  • Gate Charge: 0.47 µC (VGE = -15V...+15V, QG), 400mA (IGES)
  • Collector-Emitter Cut Off Current: 5mA (VCE = 1200V, VGE = 0V, Tvj = 25°C, ICES)
  • Gate-Emitter Leakage Current: (VCE = 0V, VGE = 20V, Tvj = 25°C)
  • Mounting M5 Screw Torque: 3-6 N·m
  • Weight: 180g
  • Operating Temperature: -40 to 125°C (Tvj op)
  • Storage Temperature: -40 to 125°C (Tstg)
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