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Infineon FS50R12KE3 IGBT Module

Infineon FS50R12KE3: 1200V/50A six-pack IGBT. TRENCHSTOP™ tech & low VCE(sat) in an EconoPACK™ 2 housing deliver high efficiency and power density for compact, reliable inverter designs.

· Categories: IGBT Module
· Manufacturer: Infineon
· Price: US$ 66
· Date Code: 2022+
. Available Qty: 54
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FS50R12KE3 Specification

## FS50R12KE3: An Engineer's Guide to this 1200V, 50A Six-Pack IGBT Module

The Infineon FS50R12KE3 is a 1200V, 50A six-pack IGBT module designed for high-efficiency power conversion, delivering a robust thermal pathway and proven reliability in a compact EconoPACK™ 2 housing. Key specifications include: 1200V Collector-Emitter Voltage | 50A DC Collector Current | VCE(sat) of 1.70V. This module offers low switching losses and excellent thermal performance. It directly addresses the engineering need for high power density and simplified thermal management in modern inverter designs. For compact motor drives under 15 kW requiring high reliability, this module's integrated NTC and low VCE(sat) make it a highly efficient and practical choice.

### Application Scenarios & Value

System-Level Benefits in Variable Frequency Drives and Industrial Automation

The FS50R12KE3 IGBT module is engineered for power conversion systems where efficiency, power density, and long-term reliability are critical design criteria. Its primary application space is in industrial Variable Frequency Drives (VFDs), servo drives, and other motor control systems typically in the 7.5 kW to 15 kW power range. In these applications, engineers constantly face the challenge of minimizing heat dissipation to reduce heatsink size, lower enclosure costs, and improve overall system reliability.

Consider the design of a compact servo drive for a CNC machine. The drive must deliver precise, dynamic control to the motor, which involves high-frequency switching and handling of significant current loads. The FS50R12KE3's low collector-emitter saturation voltage (VCE(sat)) of 1.70V at its nominal current is a decisive factor here. This parameter directly translates to lower conduction losses during operation. Lower losses mean less waste heat is generated, allowing designers to specify a smaller, more cost-effective heatsink or even leverage fanless cooling designs in certain duty cycles, contributing to a more compact and reliable end system. Furthermore, the integrated NTC thermistor provides essential real-time temperature feedback for the control system, enabling precise thermal monitoring and protection against over-temperature fault conditions—a critical feature for maintaining operational safety and extending the service life of both the drive and the motor.

For systems requiring different current or voltage specifications, related components such as the FS75R12KE3 or the FP50R12KE3 may offer alternative performance characteristics within the same technology family.

### Key Parameter Overview

Highlighting Critical Specifications for Inverter Design

The technical specifications of the FS50R12KE3 are tailored for robust performance in demanding, high-frequency switching applications. The parameters listed below are central to its function and provide the data needed for accurate system modeling, thermal design, and performance evaluation.

Parameter Value Significance for Engineering Design
Collector-Emitter Voltage (Vces) 1200 V Provides substantial voltage margin for 400/480 VAC line-powered inverters, ensuring reliability against voltage transients.
DC Collector Current (Ic @ Tc=80°C) 50 A Defines the continuous current handling capability under typical industrial operating conditions.
Collector-Emitter Saturation Voltage (VCE(sat) @ Ic=50A) 1.70 V (Typ. @ 25°C) Directly impacts conduction losses. A lower value signifies higher efficiency and reduced heat generation.
Total Switching Energy (Ets @ Ic=50A) 6.20 mJ (Typ. @ 125°C) Crucial for calculating losses in PWM applications; lower switching energy enables higher operating frequencies or improved efficiency.
Thermal Resistance, Junction-to-Case (RthJC per IGBT) 0.53 K/W Represents the efficiency of heat transfer from the semiconductor junction to the module's case, a key factor in thermal management.
Maximum Junction Temperature (Tvj max) 150 °C Sets the upper limit for safe operation, defining the thermal design window.

Download the FS50R12KE3 datasheet for detailed specifications and performance curves.

### Technical Deep Dive

Inside the EconoPACK™ 2: How Chip Technology and Housing Drive Performance

The performance of the FS50R12KE3 module is a direct result of the synergy between its internal silicon and its mechanical construction. It utilizes Infineon's TRENCHSTOP™ IGBT3 technology, which represents a significant milestone in balancing conduction and switching losses. Unlike earlier planar IGBT designs, the trench gate structure creates a better-managed plasma distribution within the device. For a design engineer, this is not just an abstract concept; it materializes as a lower VCE(sat) for a given switching speed. Think of it like optimizing traffic flow on a highway; the trench structure provides a more direct, less "congested" path for current, reducing the energy (voltage drop) lost as the current passes through. This inherent efficiency is fundamental to achieving the module's performance targets.

Equally important is the EconoPACK™ 2 housing. Its design prioritizes low stray inductance, which is critical for minimizing voltage overshoots during fast switching events. The internal layout of the busbars and terminals is carefully optimized to reduce the parasitic inductance that can cause damaging voltage spikes. This thoughtful design simplifies the external snubber circuit requirements and enhances the module's Safe Operating Area (SOA), providing a more robust and reliable component for the power electronics designer.

### Frequently Asked Questions (FAQ)

How does the TRENCHSTOP™ IGBT3 technology in the FS50R12KE3 benefit my motor drive design?
The TRENCHSTOP™ IGBT3 technology provides an optimized balance between low collector-emitter saturation voltage (VCE(sat)) and reduced switching losses. This translates directly to higher inverter efficiency, as less power is wasted as heat during both the 'on' state (conduction) and the switching transitions. For engineers, this means a cooler-running drive, which can lead to a smaller heatsink, reduced system cost, and improved long-term reliability.

What is the purpose of the integrated NTC thermistor and how should it be used?
The integrated NTC (Negative Temperature Coefficient) thermistor provides a means for real-time temperature monitoring of the module's baseplate. Its resistance decreases predictably as temperature increases. By monitoring this resistance, the system's controller can accurately estimate the module's operating temperature, enabling crucial safety functions like over-temperature protection (OTP). This feedback loop is essential for preventing thermal runaway and ensuring the module operates within its specified safe limits, particularly under heavy load or fault conditions.

Strategic Implications for System Design

Integrating the FS50R12KE3 into a power conversion system offers more than just meeting electrical specifications; it presents a strategic opportunity to enhance system-level value. The module's combination of proven IGBT3 technology and the industry-standard EconoPACK™ 2 footprint allows for design scalability and supply chain flexibility. Engineers can develop a core inverter platform and scale power levels up or down by selecting different current-rated modules within the same package family, significantly reducing redesign efforts and accelerating time-to-market. This approach aligns with modern demands for modular, platform-based product development in the competitive industrial automation market.

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