Manufacturer: Infineon Product Category: IGBT Modules RoHS: Yes Product: IGBT Silicon Modules Maximum Ratings and Characteristics: Absolute maximum ratings (Tc=25°C unless specified otherwise)
- Collector-Emitter Voltage: 1200 V (at Tvj = 25°C, VCES)
- Continuous DC Collector Current: 50 A (TC = 100°C, Tvj max = 175°C, IC nom)
- Repetitive Peak Collector Current: 100 A (tP = 1 ms, ICRM)
- Total Power Dissipation: 270 W (TC = 25°C, Tvj max = 175°C, Ptot)
- Gate-Emitter Peak Voltage: ±20V (VGES)
- Temperature under Switching Conditions: -40 to 150°C (Tvj op)
- Gate Charge: 0.47 µC (VGE = -15V...+15V, QG), 400mA (IGES)
- Collector-Emitter Cut Off Current: 5mA (VCE = 1200V, VGE = 0V, Tvj = 25°C, ICES)
- Gate-Emitter Leakage Current: (VCE = 0V, VGE = 20V, Tvj = 25°C)
- Mounting M5 Screw Torque: 3-6 N·m
- Weight: 180g
- Operating Temperature: -40 to 125°C (Tvj op)
- Storage Temperature: -40 to 125°C (Tstg)
