Infineon FZ1600R17HP4-B2 | Dominating High-Power Conversion with Unmatched Reliability
The Infineon FZ1600R17HP4-B2 is an industry-defining high-power IGBT module engineered for applications where performance, power density, and absolute reliability are non-negotiable. Housed in the robust IHM-B package, this module is purpose-built to manage the immense electrical and thermal stresses inherent in megawatt-scale power conversion systems.
Core Strengths at a Glance
- Extreme Power Handling: Rated for a formidable 1700V and 1600A, enabling the design of highly compact and powerful inverters.
- Proven IGBT4 Technology: Utilizes Infineon's TrenchSTOP™ IGBT4 High Power (HP) silicon, a mature technology optimized for low conduction losses and robustness in industrial environments.
- High Reliability Housing: The IHM-B package ensures excellent thermal cycling capability and simplified, homogenous mounting pressure for superior heat dissipation.
- Optimized for Medium Frequencies: Strikes a precise balance between low VCE(sat) and controlled switching losses, making it ideal for the 2-10 kHz range typical of high-power drives.
Application Scenarios & Engineering Value
The FZ1600R17HP4-B2 is not a general-purpose component; it is a specialist solution designed to excel in the most demanding power systems. Its unique characteristics translate directly into tangible system-level benefits.
- Wind Turbine Converters: In multi-megawatt wind turbines, reliability is paramount. The module's robust construction and proven IGBT4 technology provide the long service life required to minimize downtime and costly maintenance. Its high current rating allows for more power conversion per module, supporting the industry's push towards higher-capacity turbines. For more on this, see our guide on IGBTs at the heart of wind-to-grid conversion.
- High-Power Industrial Drives: For large-scale motor drives in applications like mining conveyors, steel mills, and marine propulsion, the FZ1600R17HP4-B2 delivers the raw power needed to control massive motors with precision. Its excellent short-circuit withstand time and rugged design provide a critical safety margin against fault conditions common in heavy industrial settings.
- Grid Infrastructure & UPS: In utility-scale energy storage systems (ESS) and large uninterruptible power supplies (UPS), efficiency and power density are key. The module's low conduction losses reduce wasted energy during operation, lowering total cost of ownership (TCO) and improving the thermal management of the entire system.
Technical Deep Dive: The Engineering Behind the Performance
Two core technologies define the superior capability of the FZ1600R17HP4-B2: the silicon and the diode technology.
TrenchSTOP™ IGBT4 High Power (HP) Chipset: This isn't just another IGBT. The IGBT4-HP is specifically engineered for high-power modules. It offers a very low on-state voltage (VCEsat), which directly reduces conduction losses—the dominant loss factor in medium-frequency applications like large motor drives. This focus on conduction efficiency means less heat is generated, simplifying heatsink design and improving overall system reliability.
Emitter Controlled Diode: Paired with the IGBT is a high-performance freewheeling diode. Its "soft" recovery characteristic is critical at this power level. A soft recovery minimizes voltage overshoots and high-frequency oscillations during turn-off, which significantly reduces electromagnetic interference (EMI). For system designers, this means less filtering is required, saving space, cost, and design complexity.
Key Parameter Overview
For engineers requiring quick-reference data, the table below highlights the critical performance specifications. For a comprehensive list of parameters, you can Download the FZ1600R17HP4-B2 Datasheet.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (V_CES) | 1700 V |
| Continuous Collector Current (I_C nom) | 1600 A (@ T_C = 80°C) |
| Collector-Emitter Saturation Voltage (V_CEsat, typ) | 2.15 V (@ I_C = 1600A, T_vj = 125°C) |
| Maximum Operating Junction Temperature (T_vj op) | 150 °C |
| Short Circuit Withstand Time (t_psc) | 10 µs |
Frequently Asked Questions (FAQ)
1. How does the IHM-B housing benefit thermal management in a 1600A application?
The IHM-B (IHM-B) package is designed for superior thermal performance. Its large, flat baseplate and defined mounting hole pattern ensure a homogenous pressure distribution when mounted to a heatsink. This minimizes voids and maximizes surface contact, leading to a very low and reliable case-to-heatsink thermal resistance (Rth(c-h)). In a 1600A module where dissipating kilowatts of heat is common, this robust thermal interface is fundamental to preventing overtemperature failures.
2. Is paralleling the FZ1600R17HP4-B2 feasible for multi-megawatt systems?
Absolutely. The FZ1600R17HP4-B2 is well-suited for parallel operation. Its IGBT4 silicon exhibits a positive temperature coefficient for VCE(sat), which is a key trait for stable current sharing. As one module heats up slightly, its on-state voltage increases, naturally diverting current to cooler modules and creating a self-balancing effect. However, successful paralleling still requires meticulous mechanical and electrical design, including symmetrical busbar layouts and matched gate drive circuitry to ensure simultaneous switching.
For expert guidance on selecting the right IGBT modules for your high-power project, or to discuss the specific requirements of the FZ1600R17HP4-B2, please contact our technical team for an in-depth consultation.
