## Infineon FZ2400R17HP4_B29 | The Benchmark for Megawatt-Scale Power Conversion
### Engineered for Mission-Critical High-Power Applications
The Infineon FZ2400R17HP4_B29 is not just another high-current IGBT; it's a foundational component for robust, megawatt-class power systems. Designed for applications where reliability is non-negotiable and efficiency is paramount, this module provides the performance headroom and thermal stability required for the most demanding industrial and renewable energy infrastructures. Its capabilities make it an ideal choice for:
* **Wind Turbine Converters:** The 1700V blocking voltage and exceptional power cycling capability ensure stable, reliable grid integration and long service life, even under fluctuating load conditions inherent in wind-to-grid conversion.
* **High-Power Industrial Drives:** In applications like large pumps, compressors, and mining equipment, its low conduction losses directly translate to higher system efficiency and reduced operational costs over the lifetime of the equipment.
* **Utility-Scale Energy Storage & DC-Choppers:** The massive 2400A current rating and robust Safe Operating Area (SOA) provide the control and durability needed for large-scale battery charging/discharging systems and high-power DC regulators.
### Key Parameter Overview
For engineers, specifications are the language of design. The FZ2400R17HP4_B29 delivers a specification profile optimized for performance and reliability in high-stress environments.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (V_CES) | 1700 V |
| Continuous Collector Current (I_C,nom) | 2400 A |
| Collector-Emitter Saturation Voltage (V_CEsat, typ. at I_C,nom, T_vj=150°C) | 2.75 V |
| Max. Operating Junction Temperature (T_vj op) | 150 °C |
| Thermal Resistance, Junction-to-Case (R_thJC) | 0.010 K/W per switch |
For a comprehensive review of all electrical and thermal characteristics, you can download the official Infineon FZ2400R17HP4_B29 datasheet here.
### Technical Deep Dive: The Engineering Behind the Performance
Two core elements define the superior capability of the Infineon FZ2400R17HP4_B29: the silicon technology and the package engineering.
IGBT4 High Power (HP4) Chip Technology
This module is built upon Infineon's proven IGBT4 High Power trench-field-stop technology. Unlike technologies optimized purely for the highest switching speeds, the HP4 is engineered for an optimal balance. It provides a very low on-state voltage (VCE(sat)), which minimizes conduction losses—the dominant loss factor in high-current, medium-frequency applications like motor drives and wind converters. This focus on conduction efficiency simplifies thermal management and boosts overall system performance.
Advanced PrimePACK™ 3+ Package
At 2400A, package design is as critical as the silicon itself. The PrimePACK™ 3+ housing is an industry benchmark for high-power modules. Its internal layout is meticulously designed for low stray inductance. This is crucial for mitigating voltage overshoots during high di/dt switching events, enhancing system reliability and often reducing the need for oversized snubber circuits. Furthermore, the package's superior thermal interface ensures that the heat generated by the powerful IGBT chip is efficiently transferred to the heatsink, maximizing the module's usable power.
### Industry Insight: Why Proven Technology Remains a Strategic Choice
While newer technologies like SiC and the latest IGBT generations capture headlines, the strategic selection of a mature and robust platform like the IGBT4-based FZ2400R17HP4_B29 offers distinct advantages. For megawatt-scale systems with long projected service lives, field-proven reliability is paramount. This module represents a low-risk, high-performance solution that system designers can implement with confidence, backed by years of application data. It provides a cost-effective pathway to achieving exceptional performance without the integration risks associated with bleeding-edge technologies, making it a cornerstone for industrial electrification projects. To better understand the landscape of power semiconductors, explore our in-depth analysis of IGBT modules.
### Frequently Asked Questions (FAQ)
What are the key considerations for paralleling the FZ2400R17HP4_B29 for higher power output?
Paralleling these modules is a common practice, and the PrimePACK™ design facilitates this. The key is to ensure symmetrical busbar design to equalize current sharing. The positive temperature coefficient of the module's V_CEsat helps balance current distribution under load, as a hotter module will naturally conduct slightly less current, promoting thermal stability. For detailed guidance, reviewing application notes on IGBT paralleling is highly recommended.
How does this module's IGBT4 technology fit in with newer generations like IGBT5 or IGBT7?
Think of it as optimization for different tasks. The IGBT4 HP technology in the FZ2400R17HP4_B29 is optimized for robustness and low conduction losses at switching frequencies typically below 5 kHz. Newer generations like IGBT5 and IGBT7 are designed to push power density and efficiency at higher switching frequencies. For many high-power drive and converter applications, the moderate frequency and extreme reliability of the IGBT4 platform remain the most cost-effective and dependable choice. If your design requirements are pushing the boundaries of power density and frequency, please contact our technical team to discuss the latest alternatives.
