Infineon T930S18TOF IGBT Module

Features

●Full blocking capability 50/60 Hz over a wide temperature range

●High DC blocking stability

●High surge current capability

●High turn-on di/dt capability

●High dv/dt capability

Benefits

●Minimized maintenance and reduced downtime due to high reliability

●Easy System power scaling by special designs for series- and parallel connection

●Fuseless design possible due to high overload capability

Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1800V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :1000A

Collector power dissipation Pc:2080W

Isolation Voltage VIsol (AC 1 minute) :3600V

Operating junction temperature Tj:+150°C