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Infineon F3L150R07W2E3_B11 IGBT Module

Infineon IGBT3 Module with trench 650V 150A

· Categories: IGBT Module
· Manufacturer: Infineon
· Price: US$ 27
· Date Code: 2022+
. Available Qty: 353
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F3L150R07W2E3_B11 Specification

Typical Applications . 3-Level-Applications

. Solar Applications

. UPS Systems

Electrical Features

• Increased blocking voltage capability to 650V

• Low inductive design

• Low Switching Losses

Low VCEsat

MaximumRatedValues

Maximum Rated Values (Tvj = 25°C unless otherwise specified):

Collector-Emitter Voltage (Vces): 650V at Tvj = 25°C

Continuous DC Collector Current (Ic): 150A at TC = 25°C, Tvj max = 175°C

Repetitive Peak Collector Current (Icp): 300A for tP = 1ms

Total Power Dissipation (Ptot): 335W at TC = 25°C, Tvj max = 175°C

Gate-Emitter Peak Voltage (VGES): ±20V

Temperature under Switching Conditions (Tvj op): -40 to 150°C

Storage Temperature (Tstg): -40 to 125°C

Weight: 39g

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