Infineon FZ900R12KF5 IGBT Module

Infineon FZ900R12KF5 is a high-power IGBT (Insulated Gate Bipolar Transistor) module used in power electronic systems for industrial and renewable energy applications. FZ900R12KF5 is 1200V/900A module, features advanced IGBT4 technology, providing high efficiency, reliability, and performance.

The module comes in a compact and robust package, which allows easy integration into power electronic systems. FZ900R12KF5 also features low-inductance design, reduces switching losses and improves the overall efficiency of the system.

Infineon FZ900R12KF5 is suitable for a wide range of applications, including motor drives, renewable energy systems, welding equipment, and power supplies.

Maximum Ratings and Characteristics

.Absolute maximum ratings (Tc=25°C unless otherwise specified)

Collector-emitter voltage at 25°C (Tvj = 25°C): VCES 1200 V

Continuous DC collector current at 100°C (Tvj max = 175°C): IC nom 900 A

Repetitive peak collector current for 1 ms: ICRM 1800 A

Total power dissipation at 25°C (Tvj max = 175°C): Ptot 4300 W

Gate-emitter peak voltage: VGES ±20V

Temperature under switching conditions: Tvj op -40~150°C

Mounting M5 screw torque 2.5~5.0 N·m