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Infineon FZ1200R33KF2C IGBT Module

Infineon FZ1200R33KF2C: 3300V/1200A IGBT module for demanding megawatt inverters. Low VCE(sat) ensures robust reliability, high efficiency, and simplified thermal management.

· Categories: IGBT Module
· Manufacturer: Infineon
· Price: US$ 150
· Date Code: 2021+
. Available Qty: 247
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FZ1200R33KF2C Specification

FZ1200R33KF2C: High-Power 3300V IGBT Module for Demanding Inverter Applications

Introduction to the FZ1200R33KF2C

A Strategic Component for Megawatt-Scale Power Conversion Systems

The Infineon FZ1200R33KF2C is a high-voltage, high-current IGBT module engineered for the rigorous demands of multi-megawatt power conversion systems. It delivers a robust performance profile defined by its core specifications: 3300V | 1200A | VCE(sat) 3.40V (typ.). This module is built to ensure high operational reliability and facilitate efficient thermal management, two critical factors in high-power industrial applications. By providing a substantial current rating at a high blocking voltage, it directly addresses the engineering challenge of scaling power electronics for applications like medium-voltage drives and renewable energy grid interfaces. For systems requiring robust performance in demanding high-voltage environments, the FZ1200R33KF2C offers a foundation for reliable and efficient power control.

Key Parameter Overview

Highlighting Critical Specifications for High-Reliability Designs

The technical specifications of the FZ1200R33KF2C are tailored for high-power switching applications where both electrical performance and thermal stability are paramount. The following table highlights the key metrics that design engineers should focus on when evaluating this module for demanding power conversion topologies.

Parameter Symbol Value Conditions
Collector-Emitter Voltage VCES 3300 V Tvj = 25°C
Nominal Collector Current IC nom 1200 A -
Collector-Emitter Saturation Voltage VCE sat 3.40 V (typ.) / 4.30 V (max.) IC = 1200 A, VGE = 15 V, Tvj = 25°C
Total Power Dissipation Ptot 14.5 kW TC = 25°C, Tvj max = 150°C
Thermal Resistance, Junction to Case RthJC max. 10.5 K/kW per IGBT
Virtual Junction Temperature Tvj op -40 to 150 °C -

Download the FZ1200R33KF2C datasheet for detailed specifications and performance curves.

Application Scenarios & Value

Delivering System-Level Reliability in Megawatt-Class Inverters

The FZ1200R33KF2C is engineered to be a cornerstone component in high-power, high-voltage conversion systems where reliability and performance are non-negotiable.

A primary application is in medium-voltage Variable Frequency Drives (VFDs) used in heavy industries such as mining, marine propulsion, and large-scale pumping stations. In these multi-level inverter topologies, the 3300V blocking voltage provides the necessary design margin for operating on 3.3kV to 6.6kV class grids. The challenge for engineers here is managing immense thermal loads while ensuring stable, long-term operation. The module's high continuous current rating of 1200A, combined with a total power dissipation capacity of 14.5 kW, directly addresses this. It allows the system to handle high torque and overload conditions without compromising the IGBT's Safe Operating Area (SOA), translating to enhanced equipment uptime and reduced maintenance cycles.

Further key applications include:

  • Renewable Energy Inverters: Central solar and wind turbine inverters that interface with the medium-voltage grid benefit from the module's high voltage rating, enabling more efficient power transmission.
  • Traction Drives: Used in electric locomotives and other heavy rail vehicles, where robust performance and the ability to handle high currents are critical for acceleration and regenerative braking.
  • Industrial Power Supplies: High-power systems for applications like industrial heating or large-scale electrolysis require components that can reliably switch high currents without excessive losses.

The module's low VCE(sat) is crucial in these applications. A lower saturation voltage means less power is converted into heat during the 'on' state. Think of it like a water valve: a lower VCE(sat) is like a valve that opens wider, offering less resistance and wasting less energy as water flows through. This directly translates to lower conduction losses, reducing the burden on the cooling system and improving overall inverter efficiency. For applications demanding higher current density and power levels, the related FZ2400R12HP4 can be considered for evaluation.

Frequently Asked Questions (FAQ) for FZ1200R33KF2C

What is the primary significance of the 3300V VCES rating for system design?

The 3300V collector-emitter voltage rating is a critical specification that enables the use of this module in power conversion systems connected to medium-voltage grids. It provides the necessary voltage headroom and safety margin to withstand voltage transients and ensure reliable operation in applications like 3.3kV motor drives or grid-tied inverters, simplifying insulation and busbar design.

How does the VCE(sat) of 3.40V (typical) impact thermal management strategy?

A lower VCE(sat) directly reduces conduction power losses (P = VCE(sat) * IC). With a typical value of 3.40V at its nominal current, this module generates less waste heat compared to devices with higher saturation voltages. This allows engineers to potentially design more compact and cost-effective cooling systems (heatsinks, fans, or liquid cooling) or to operate the module at higher output currents for a given cooling solution, thereby increasing power density.

Is this module suitable for applications requiring parallel connection of IGBTs?

The datasheet provides characteristics for a single IGBT switch. While paralleling IGBT modules is a common practice to achieve higher current output, it requires careful engineering consideration. Factors such as matching the VCE(sat) and gate threshold voltage, ensuring symmetrical layout for busbars, and implementing individual gate resistors are crucial for balanced current sharing. The datasheet should be consulted for detailed performance curves to assess suitability for a specific parallel design.

What does the maximum junction temperature of 150°C imply for operational reliability?

The specified maximum operating junction temperature (Tvj op) of 150°C indicates the thermal limit of the semiconductor chips. Operating well below this limit is key to long-term reliability and achieving a high number of power cycles before wear-out. A robust thermal design that maintains the junction temperature with a significant margin below 150°C, even during worst-case load and ambient temperature conditions, is essential for dependable system performance in the field.

Strategic Outlook

Enabling the Next Generation of High-Power Grid Infrastructure

The FZ1200R33KF2C is more than just a high-power switch; it's an enabling component for the ongoing energy transition and industrial electrification. Its 3.3kV classification places it at the heart of systems crucial for upgrading and expanding grid infrastructure, from integrating large-scale renewable energy farms to powering the next generation of efficient, high-power industrial machinery. As industries move towards higher levels of automation and energy efficiency standards become more stringent, the demand for reliable, high-voltage power modules like this will continue to grow. Investing in components with robust specifications is a strategic decision that supports the development of scalable, future-proof power electronic platforms.

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