Infineon BSM150GT120DN2(6) New IGBT Module

Infineon BSM150GT120DN2(6) is a power semiconductor module that is designed to handle high power & high voltage applications.

The BSM150GT120DN2(6) module is a half-bridge configuration that contains two IGBT (Insulated Gate Bipolar Transistor) devices that are capable of switching high currents at high frequencies. BSM150GT120DN2(6) has voltage rating 1200V & current rating of 150A, suitable for industrial drives, renewable energy systems, & traction applications.

The SEMITOP 6 package type of this module provides easy assembly and low inductance, suitable use for high-frequency switching applications. The package also has a high thermal conductivity, which allows for efficient heat dissipation.

BSM150GT120DN2(6) IGBT Power Module
Preliminary data
. Solderable Power module 3-phase full-bridge
. Including fast free-wheel diodes
. Package with insulated metal base plate
Maximum ratings
Collector-emitter voltage VCE 1200V
Collector-gate voltage RGE= 20 KΩ
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=80°C :150A
Collector current Icp 1ms Tc=80°C :300A
Pulsed dissipation Per IGBT Tc=25°C Ptot:1250W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *3 N·m
Creepage distance 11 mm