Infineon FF225R12ME4 IGBT Module

Product: IGBT Silicon Modules

Collector- Emitter Voltage VCEO Max: 1200 V

Collector-Emitter Saturation Voltage: 2.15 V

Continuous Collector Current at 25 C: 225 A

Gate-Emitter Leakage Current: 400 nA

Pd - Power Dissipation: 1050 W

Minimum Operating Temperature: - 40 C

Maximum Operating Temperature: + 150 C

Packaging: Tray

Technology: Si

Brand: Infineon Technologies

Mounting Style: Chassis Mount

Maximum Gate Emitter Voltage: 20 V

Product Type: IGBT Modules

Factory Pack Quantity: 10

Subcategory: IGBTs

Part # Aliases: SP000405064 FF225R12ME4 BOSA1

Infineon made IGBT Modules FF225R12ME4 IGBT 1200V 225A