Infineon FS200R12PE4 | Optimized for High-Reliability Industrial Power Conversion
The Infineon FS200R12PE4 is a 1200V, 200A six-pack IGBT module designed for engineers who require a robust, efficient, and thermally stable solution for three-phase inverter systems. Housed in the industry-standard EconoPACK™ 4 package, this module integrates proven TRENCHSTOP™ IGBT4 technology to deliver a balanced performance profile that excels in demanding industrial applications.
Product Highlights at a Glance
- Voltage and Current Rating: 1200V collector-emitter voltage (V_CES) and 200A nominal collector current (I_C nom), providing substantial headroom for medium-power applications.
- Advanced Chip Technology: Features Infineon's TRENCHSTOP™ IGBT4 and an emitter-controlled diode, a combination engineered for an optimal trade-off between conduction and switching losses.
- Integrated NTC Thermistor: Includes an on-board temperature sensor for precise thermal monitoring, enabling superior system protection and lifetime management.
- Rugged EconoPACK™ 4 Housing: Offers excellent thermal conductivity through its Al2O3 substrate, robust screw terminals for secure power connections, and an industry-standard footprint for easy design integration and second-sourcing.
Technical Deep Dive: The Engineering Inside
The performance of the Infineon FS200R12PE4 is rooted in two key design choices: its silicon technology and its packaging. The TRENCHSTOP™ IGBT4 chip represents a mature and highly reliable generation of power switches. By employing a trench gate structure combined with a field-stop layer, it achieves a low on-state voltage, or VCE(sat), of 1.90V (typical). This directly translates to lower conduction losses, a critical factor in applications with high load currents or low switching frequencies. Simultaneously, the field-stop layer allows for a thinner silicon die, which reduces turn-off switching energy (E_off) and improves controllability, simplifying the gate drive design.
This advanced silicon is housed in the EconoPACK™ 4 package, which is an engineering asset in itself. The package's Alumina (Al2O3) Direct Bonded Copper (DBC) substrate provides excellent electrical isolation and a low thermal resistance path from the chip to the heatsink. This efficient heat dissipation is fundamental to reliability, ensuring the IGBTs operate within their Safe Operating Area (SOA) even under heavy loads. The inclusion of an integrated NTC thermistor is not just a convenience; it's a critical feature for implementing sophisticated thermal protection schemes, preventing catastrophic failures due to overheating.
Key Parameter Overview
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (V_CES) | 1200 V |
| Nominal Collector Current (I_C nom) | 200 A |
| Collector-Emitter Saturation Voltage (V_CE(sat), typ. at 25°C) | 1.90 V |
| Turn-On Switching Energy (E_on, typ. at 125°C) | 28.00 mJ |
| Turn-Off Switching Energy (E_off, typ. at 125°C) | 22.00 mJ |
| Thermal Resistance, Junction-to-Case (R_th(j-c) per switch) | 0.27 K/W |
| Operating Junction Temperature (T_vj op) | -40 to 150 °C |
Application Scenarios & Value Proposition
The balanced characteristics of the FS200R12PE4 make it a versatile workhorse for several key power conversion systems.
- Motor Drives: In industrial motor drives and servo controls, the module's low VCE(sat) minimizes power loss and heat generation, especially at lower operating speeds where current is high. Its robust package withstands the vibrations and thermal cycling inherent in factory automation environments.
- Solar Inverters: The 1200V rating provides the necessary safety margin for grid-tied solar systems. The module's high efficiency ensures maximum power is harvested from the PV array, while the integrated NTC allows for precise temperature management within the inverter, which is often installed in challenging outdoor conditions.
- Uninterruptible Power Supplies (UPS): Reliability is the non-negotiable requirement for UPS systems. The FS200R12PE4, built on proven IGBT4 technology, delivers the dependability needed to protect critical loads. Its thermal efficiency helps reduce the size and cost of the required cooling system.
Frequently Asked Questions (FAQ)
What is the recommended gate drive strategy for the FS200R12PE4?
For optimal performance and to prevent parasitic turn-on, a gate drive voltage of +15V for turn-on and a negative voltage between -8V and -15V for turn-off is highly recommended. The negative turn-off voltage provides a strong buffer against the Miller effect, ensuring the IGBT remains securely off during the dV/dt events common in a half-bridge topology. For more insights, review these practical tips for robust IGBT gate drive design.
Is it possible to parallel FS200R12PE4 modules?
Yes, paralleling is feasible but requires careful engineering. The IGBT4's positive temperature coefficient of VCE(sat) inherently helps with current balancing as a hotter module will conduct slightly less current. However, achieving reliable current sharing demands a highly symmetrical layout for both power and gate drive paths, individual gate resistors for each module, and a well-designed thermal management system to keep all modules at a similar temperature. For further reading, Infineon provides excellent resources on the topic of IGBT paralleling.
For detailed specifications or to discuss how the FS200R12PE4 can fit into your next project, please contact our technical team.
