#ON Semiconductor, #SBC847BDW1T3G, #IGBT_Module, #IGBT, SBC847BDW1T3G Dual NPN Bipolar Transistor, SC-88/SC70-6/SOT-363 6 LEAD, 10000-REEL; SBC847BDW1T3G
Manufacturer Part Number: SBC847BDW1T3GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-G6Pin Count: 6Manufacturer Package Code: 419B-02ECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 1.48Collector Current-Max (IC): 0.1 ACollector-Emitter Voltage-Max: 45 VConfiguration: SEPARATE, 2 ELEMENTSDC Current Gain-Min (hFE): 200JESD-30 Code: R-PDSO-G6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Temperature-Max: 150 °COperating Temperature-Min: -55 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 0.38 WReference Standard: AEC-Q101Subcategory: Other TransistorsSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Dual NPN Bipolar Transistor, SC-88/SC70-6/SOT-363 6 LEAD, 10000-REEL