Microsemi Corporation  2N6989

  • 2N6989

2N6989 Power Bipolar Transistor, 0.8A I(C), 1-Element, Silicon, TO-116, Ceramic, Metal-Sealed Cofired, 14 Pin,; 2N6989

· Categories: IGBT
· Manufacturer: Microsemi Corporation 
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 4702
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Content last revised on November 28, 2023

Manufacturer Part Number: 2N6989Pbfree Code: NoPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPackage Description: IN-LINE, R-CDIP-T14ECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 5.11Collector Current-Max (IC): 0.8 AConfiguration: SINGLEDC Current Gain-Min (hFE): 30JEDEC-95 Code: TO-116JESD-30 Code: R-CDIP-T14JESD-609 Code: e0Number of Elements: 1Number of Terminals: 14Operating Temperature-Max: 200 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPower Dissipation-Max (Abs): 1.5 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: NOTerminal Finish: TIN LEADTerminal Form: THROUGH-HOLETerminal Position: DUALTime Power Bipolar Transistor, 0.8A I(C), 1-Element, Silicon, TO-116, Ceramic, Metal-Sealed Cofired, 14 Pin,