#FUJI, #6MBI75S_140, #IGBT_Module, #IGBT, 6MBI75S-140 Insulated Gate Bipolar Transistor, 100A I(C), 1400V V(BR)CES, N-Channel, MODULE-39; 6MBI75S-140
Manufacturer Part Number: 6MBI75S-140Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X19Pin Count: 39Manufacturer: Fuji Electric Co LtdRisk Rank: 5.84Case Connection: ISOLATEDCollector Current-Max (IC): 100 ACollector-Emitter Voltage-Max: 1400 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X19Number of Elements: 6Number of Terminals: 19Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 450 nsTurn-on Time-Nom (ton): 350 ns Insulated Gate Bipolar Transistor, 100A I(C), 1400V V(BR)CES, N-Channel, MODULE-39