MACMIC MMF200ZV040DK1 IGBT Module

MMF200ZV040DK1 SiC Diode: Thermal Stability Data Sheet

Engineered for high-temperature reliability, the Littelfuse MMF200ZV040DK1 SiC Schottky Diode Module delivers exceptional thermal performance for demanding power conversion systems. With core specifications of 400V | 200A | 175°C Max Junction Temperature, it provides quantifiable benefits including enhanced power density and superior system longevity. This module directly addresses the challenge of thermal management in compact designs by leveraging Silicon Carbide technology to ensure stable operation and minimal switching losses even under significant thermal stress, a critical factor for applications like DC fast charging infrastructure.

Strategic Thermal Design in an Era of Power Density

As industries from electric vehicle charging to renewable energy push for smaller footprints and higher power outputs, effective thermal management has become a primary design constraint. Power components are expected to operate reliably at elevated ambient temperatures without compromising on efficiency or lifespan. The MMF200ZV040DK1 SiC Schottky Diode Module is architected to meet this challenge head-on. By utilizing advanced Silicon Carbide technology, it supports a maximum junction temperature of 175°C, providing a substantial thermal margin. This capability allows engineers to design more compact cooling systems, or to increase the power throughput of an existing design, directly contributing to a lower total cost of ownership and accelerated development cycles for next-generation power electronics.

A Closer Look at Thermal Performance Metrics

Understanding the thermal characteristics of a power module is fundamental to ensuring its long-term viability in any application. The MMF200ZV040DK1's performance is anchored by several key datasheet values that translate directly into operational advantages.

• Low Thermal Resistance (Rth(j-c)): With a thermal resistance from junction to case of just 0.22 °C/W per diode, this module ensures efficient heat evacuation. This parameter acts like the width of a pipeline for heat; a lower value means a wider pipe, allowing waste heat to be transferred away from the sensitive SiC die more effectively. This results in a lower operating junction temperature, a critical factor in extending component life.
• High Maximum Junction Temperature (Tj,max): The 175°C rating provides a robust safety margin for designs operating in harsh thermal environments. What is the primary benefit of a high Tj,max? It allows for consistent performance during overload conditions and in applications with high ambient temperatures, such as uncooled outdoor enclosures.
• Minimal Switching Losses: The inherently low total capacitive charge (Qc) of the SiC Schottky diodes minimizes the energy lost during switching operations. Because these losses are a primary source of heat, reducing them contributes significantly to the overall thermal stability of the system.

Data for System-Level Component Evaluation

When evaluating power components, a direct comparison of key performance indicators provides the necessary data for an informed engineering decision. The MMF200ZV040DK1 presents a compelling profile for systems where thermal stability is paramount. The following is a factual comparison intended to support your design analysis. For systems requiring a different voltage or current rating, the PM150CVA120-2 may be considered for its 1200V capability.

Proven Applications in Thermally Demanding Environments

The robust thermal design of the MMF200ZV040DK1 makes it exceptionally well-suited for a range of high-power applications where heat dissipation and operational stability are critical design drivers.

High-Frequency Power Conversion

In systems like switched-mode power supplies (SMPS) and industrial induction heating, higher switching frequencies enable the use of smaller magnetic components, but also generate more switching losses and heat. The low reverse recovery and high temperature tolerance of the MMF200ZV040DK1 allow designers to push frequencies higher, shrinking system size and cost without incurring a thermal penalty. For systems where efficiency at high frequency is the primary goal, the MMF200ZV040DK1's SiC technology offers a clear advantage over traditional silicon devices.

DC Fast Charging and Solar Inverters

The output rectification stage of an EV DC fast charger or a utility-scale solar inverter operates under immense thermal load. These applications demand both high efficiency to minimize wasted energy and extreme reliability to ensure uptime. The module's low conduction and switching losses, combined with its superior thermal conductivity, ensure it can handle continuous high-current operation while maintaining a safe operating temperature, contributing to the long-term reliability of the entire charging or generation system. What is this module's best fit? For high-current rectification stages where thermal margin is prioritized, this 175°C-rated SiC module is an optimal choice over standard 150°C silicon alternatives.

Core Specifications for Thermal and Electrical Design

The following parameters are critical for system integration and performance modeling. For a comprehensive list of specifications and performance graphs, please download the official datasheet.

Download the MMF200ZV040DK1 Datasheet

As power electronics continue to evolve, components like the MMF200ZV040DK1 will be instrumental in enabling the next leap in efficiency and power density. Its foundation in Silicon Carbide and focus on thermal excellence provide a strategic platform for developing compact, reliable, and future-ready power systems that can operate effectively in the most demanding thermal landscapes. This module represents a forward-looking choice for engineers designing the high-performance chargers, inverters, and power supplies that will shape the future of energy management.