#Fuji, #2DI30A_120, #IGBT_Module, #IGBT, 2DI30A-120 Power Bipolar Transistor, 30A I(C), 1200V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin; 2DI30A-120
Manufacturer Part Number: 2DI30A-120Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPackage Description: FLANGE MOUNT, R-PUFM-X7Manufacturer: Fuji Electric Co LtdRisk Rank: 5.81Collector Current-Max (IC): 30 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXDC Current Gain-Min (hFE): 70Fall Time-Max (tf): 3000 nsJESD-30 Code: R-PUFM-X7Number of Elements: 2Number of Terminals: 7Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNPower Dissipation Ambient-Max: 300 WPower Dissipation-Max (Abs): 200 WQualification Status: Not QualifiedRise Time-Max (tr): 3000 nsSubcategory: BIP General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Max (toff): 18000 nsTurn-on Time-Max (ton): 3000 ns Power Bipolar Transistor, 30A I(C), 1200V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin