Name: FUJI 7MBR100U4B120 IGBT_Module
Brand: FUJI
SKU: 7MBR100U4B120
Price: 75 USD
Availability: InStock

#FUJI, #7MBR100U4B120, #IGBT_Module, #IGBT, 7MBR100U4B120 Insulated Gate Bipolar Transistor 100A I(C) 1200V V(BR)CES N-Channel ROHS COMPLIANT PACKAGE-24

· Categories: IGBT Module

· Manufacturer: FUJI

· Price: US$ 75

· Date Code: 2021+

. Available Qty: 473

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Tags: 100a 1200v 7mbr FUJI n-channel

+Shipping: US$ 35

= Total: US$ 110

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7MBR100U4B120 Specification

Sell 7MBR100U4B120, #FUJI #7MBR100U4B120 Stock, 7MBR100U4B120 Insulated Gate Bipolar Transistor 100A I(C) 1200V V(BR)CES N-Channel ROHS COMPLIANT PACKAGE-24, #IGBT_Module, #IGBT, #7MBR100U4B120

Email: sales@shunlongwei.com
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The 7MBR100U4B120 is an Insulated Gate Bipolar Transistor (IGBT) module designed by Fuji Electric Co Ltd. It features a collector current rating of 100A and a collector-emitter voltage rating of 1200V. This N-channel IGBT module comes in a RoHS-compliant package with 24 pins.

Key Specifications:

Collector Current-Max (IC): 100 A

Collector-Emitter Voltage-Max: 1200 V

Package Description: Flange Mount, R-XUFM-X24

Pin Count: 24

Case Connection: Isolated

Package Style: Flange Mount

Polarity/Channel Type: N-Channel

Number of Elements: 7

Terminal Position: Upper

Applications:

Industrial motor drives

Inverters and converters

Power electronic systems

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FUJI 7MBR100U4B120 IGBT Module

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7MBR100U4B120 Specification

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