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BSM15GD120DN2E3224
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: YES
Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 25 A
Gate-Emitter Leakage Current: 150 nA
Maximum Operating Temperature: + 150 C
Package / Case: EconoPACK 2
Brand: Infineon Technologies
Maximum Gate Emitter Voltage: 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Pd - Power Dissipation: 145 W
Factory Pack Quantity: 10



Shunlongwei Inspected every BSM15GD120DN2E3224 before Ship, All BSM15GD120DN2E3224 with 6 months warranty.
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