#Vishay Siliconix, #SI4569DY_T1_GE3, #IGBT_Module, #IGBT, SI4569DY-T1-GE3 N- AND P- CHANNEL 40-V (D-S) MOSFET - Tape and Reel; SI4569DY-T1-GE3
Manufacturer Part Number: SI4569DY-T1-GE3Pbfree Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPart Package Code: SOTPackage Description: SMALL OUTLINE, R-PDSO-G8Pin Count: 8ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 5.81Avalanche Energy Rating (Eas): 5 mJConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 40 VDrain Current-Max (ID): 6 ADrain-source On Resistance-Max: 0.027 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: MS-012AAJESD-30 Code: R-PDSO-G8JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNEL AND P-CHANNELPulsed Drain Current-Max (IDM): 20 AQualification Status: Not QualifiedSurface Mount: YESTerminal Finish: PURE MATTE TINTerminal Form: GULL WINGTerminal Position: DUALTime N- AND P- CHANNEL 40-V (D-S) MOSFET - Tape and Reel