#SEMIKRON, #SKM22GD121D, #IGBT_Module, #IGBT, SKM22GD121D Insulated Gate Bipolar Transistor, 22A I(C), 1200V V(BR)CES, N-Channel; SKM22GD121D
Manufacturer Part Number: SKM22GD121DPart Life Cycle Code: ObsoleteIhs Manufacturer: Semikron INTERNATIONALPackage Description: FLANGE MOUNT, R-PUFM-D17Manufacturer: SemikronRisk Rank: 5.82Case Connection: ISOLATEDCollector Current-Max (IC): 22 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Thr Voltage-Max: 6.5 VGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PUFM-D17Number of Elements: 6Number of Terminals: 17Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 900 WPower Dissipation-Max (Abs): 150 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: SOLDER LUGTerminal Position: UPPERTransistor Application: MOTOR CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 150 nsTurn-on Time-Nom (ton): 40 nsVCEsat-Max: 4 V Insulated Gate Bipolar Transistor, 22A I(C), 1200V V(BR)CES, N-Channel