Content last revised on October 31, 2023
Part #FS200R12PT4
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: Details
Product: IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.15 V
Continuous Collector Current at 25 C: 280 A
Gate-Emitter Leakage Current: 400 nA
Pd - Power Dissipation: 1000 W
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C
Packaging: Tray
Technology: Si
Brand: Infineon Technologies
Mounting Style: Chassis Mount
Maximum Gate Emitter Voltage: 20 V
IGBT module FS200R12PT4 Infineon 1200V/280A/1000W
