Shunlongwei Co Ltd.

Shunlongwei Co. ltd.

IGBT Module / LCD Display Distributor

Customer Service
+86-755-8273 2562

Infineon FS150R12KT4

Infineon FS150R12KT4: A 1200V/150A IGBT module with TRENCHSTOP™ IGBT4 tech. Engineered for low conduction losses and maximum efficiency in demanding motor drives.

· Manufacturer: Infineon
· Price: US$ 75
· Date Code: 2022+
. Available Qty: 320
Like
Tweet
Pin It
4k
Email: sales@shunlongwei.com
Whatsapp: 0086 189 2465 1869

Contact us To Buy Now !

Sending...Please Wait.

FS150R12KT4 Specification

FS150R12KT4 | 1200V 150A IGBT Module | TRENCHSTOP™ IGBT4

Product Overview: Efficiency and Reliability in Power Conversion

The Infineon FS150R12KT4 is a high-performance six-pack IGBT module engineered to deliver a superior balance of low conduction losses and switching efficiency for demanding power conversion applications. This module integrates TRENCHSTOP™ IGBT4 technology to provide robust and reliable performance. Key specifications include: 1200V | 150A | VCE(sat) 1.70V (typ). The primary engineering benefits are minimized power dissipation and enhanced system reliability through precise thermal monitoring. Its low conduction losses make it highly effective for motor drive applications where Pulse-Width Modulation (PWM) frequencies are in the moderate range, maximizing overall system efficiency. For motor drives up to 45 kW requiring a robust thermal design and high energy efficiency, the FS150R12KT4 is a benchmark component.

Key Parameter Overview

Decoding the Specifications for Optimal Power Conversion Efficiency

The technical specifications of the FS150R12KT4 are tailored for engineers focused on maximizing system efficiency and ensuring long-term operational reliability. The values presented below are critical for accurate system modeling, thermal management calculations, and performance prediction.

Parameter Symbol Condition Value Unit
Collector-Emitter Voltage VCES Tvj = 25°C 1200 V
Continuous Collector Current IC nom TC = 100°C, Tvj max = 175°C 150 A
Collector-Emitter Saturation Voltage VCE sat IC = 150 A, VGE = 15 V, Tvj = 25°C 1.70 (typ.) V
Gate-Emitter Threshold Voltage VGE(th) IC = 6.0 mA, VCE = VGE, Tvj = 25°C 5.8 (5.0 - 6.5) V
Total Switching Energy Ets IC = 150 A, VCE = 600 V, VGE = ±15 V, RG = 3.6 Ω, Tvj = 125°C 21.50 (typ.) mJ
Short Circuit Withstand Time tpsc VGE ≤ 15 V, VCC = 800 V, Tvj op ≤ 150°C 10 µs
Max. Junction Temperature Tvj op - 150 °C
Thermal Resistance, Junction-to-Case RthJC per IGBT 0.130 K/W

Download the FS150R12KT4 datasheet for detailed specifications and performance curves.

Application Scenarios & Value

System-Level Benefits in Industrial Motor Drives and Power Systems

The FS150R12KT4 is engineered to excel in applications where efficiency and thermal stability are critical design drivers. Its characteristics make it a prime candidate for a variety of power conversion topologies.

  • Variable Frequency Drives (VFDs): In VFDs for AC induction motors, efficiency is paramount. Consider a VFD in a logistics conveyor system, where the main engineering challenge is minimizing energy consumption and managing heat within a compact control cabinet. The FS150R12KT4's low VCE(sat) of 1.70V directly reduces conduction losses—the primary source of power loss in moderate-frequency PWM schemes. This lower heat dissipation allows for the use of smaller, more cost-effective heatsinks, reducing both the system's physical footprint and its total cost of ownership.
  • Solar Inverters: The module's robust thermal performance and high DC voltage rating are well-suited for the DC/AC inversion stage in grid-tied solar applications, ensuring high energy harvest and long service life.
  • Uninterruptible Power Supplies (UPS): In UPS systems, reliability and efficiency are non-negotiable. The integrated NTC thermistor provides critical, real-time temperature feedback, enabling advanced thermal protection strategies that prevent catastrophic failures during overload conditions.
  • Servo Drives: For precision motion control, the controlled switching characteristics of the TRENCHSTOP™ IGBT4 technology contribute to lower EMI, simplifying filter design and helping achieve system-level electromagnetic compatibility (EMC).

While the FS150R12KT4 is engineered for this power class, systems with lower power requirements might evaluate the pin-compatible FS75R12KE3. For higher power output, the FF200R12KT4 provides increased current handling in a similar package.

Technical Deep Dive

Inside the TRENCHSTOP™ IGBT4: Balancing Conduction and Switching Performance

The core of the FS150R12KT4's performance lies in the TRENCHSTOP™ IGBT4 chip technology from Infineon. This technology represents a critical balance between two primary sources of power loss in an IGBT: conduction losses and switching losses. What defines the FS150R12KT4's efficiency? Its low VCE(sat) of 1.70V minimizes conduction losses. Think of VCE(sat) as the 'friction' an engine experiences while running at a steady speed; lower friction means less energy is wasted as heat. The IGBT4's low VCE(sat) minimizes this constant power drain during the on-state.

Switching losses, conversely, are like the energy consumed during acceleration and deceleration. The IGBT4 is engineered to make this on/off transition more efficient than previous generations, reducing the energy wasted with each cycle. The FS150R12KT4 finds a 'sweet spot' in this trade-off, making it highly effective for applications like VFDs and Servo Drives where switching frequencies are moderate (typically 2-16 kHz). This optimization ensures that the total power loss (conduction + switching) is minimized, leading directly to higher overall inverter efficiency and greater thermal stability.

Frequently Asked Questions

Engineering Questions on Performance and Implementation

How does the typical VCE(sat) of 1.70V on the FS150R12KT4 translate to tangible benefits in a motor drive application?

A lower VCE(sat) directly reduces conduction power loss, calculated as Pcond = VCE(sat) * IC. In a 30kW motor drive operating near the module's nominal current, this reduction can amount to significant wattage savings compared to older IGBT technologies. This translates directly to lower heatsink temperatures, improved system reliability, and higher overall energy efficiency, helping the end-product meet stringent energy standards like IE3/IE4.

What is the primary function of the integrated NTC thermistor and what are its key parameters?

The integrated NTC (Negative Temperature Coefficient) thermistor acts as a temperature sensor. How does the module aid in thermal management? An integrated NTC thermistor enables precise temperature monitoring. Its primary function is to provide real-time feedback of the module's baseplate temperature to the control system. According to the datasheet, it has a resistance of 5 kΩ at 25°C with a B-value (B25/100) of 3375 K. This allows the drive's controller to implement over-temperature protection (OTP), reducing output power or shutting down safely if thermal limits are approached.

The module uses TRENCHSTOP™ IGBT4 technology. What does this mean for switching frequency selection compared to older or newer IGBT generations?

TRENCHSTOP™ IGBT4 is optimized for a balance between low VCE(sat) and moderate switching losses, making it ideal for frequencies in the 2 kHz to 20 kHz range, which is common for industrial motor drives. It offers lower conduction losses than faster-switching IGBTs but is more efficient than older, slower generations. For applications requiring significantly higher frequencies (>20-30 kHz), a different IGBT family might be more suitable to manage switching losses.

What are the recommended gate driver voltage levels for ensuring optimal switching behavior with the FS150R12KT4?

The datasheet specifies optimal performance with a gate-emitter voltage (VGE) of +15V for turn-on and -15V for turn-off. Using a negative turn-off voltage is crucial for improving noise immunity and preventing parasitic turn-on, especially in noisy, high dV/dt environments typical of inverter applications. The gate-emitter threshold voltage (VGE(th)) is specified between 5.0V and 6.5V, and the gate driver must provide a stable voltage well above this to ensure the IGBT is fully saturated (turned on) to achieve the low VCE(sat).

Strategic Design Considerations

Integrating the FS150R12KT4 provides a strategic advantage for designers aiming to create next-generation power systems. Its foundation in the proven TRENCHSTOP™ IGBT4 technology offers a reliable, efficient, and cost-effective core for power stages. By enabling more compact thermal solutions and reducing overall energy losses, this module allows engineering teams to not only meet but exceed modern performance and energy efficiency benchmarks, positioning their final products competitively in the industrial automation and renewable energy markets.

More from Infineon
Infineon
Infineon
Infineon
Infineon