Infineon FZ2400R12KL4C IGBT Module | Unrivaled Power Density for High-Current Applications
The Infineon FZ2400R12KL4C is an industry-defining IGBT power module engineered for high-power conversion systems where performance, efficiency, and unwavering reliability are non-negotiable. Designed in a robust IHM-B package, this 1200V / 2400A chopper module provides the raw power handling capability required for large-scale industrial drives, renewable energy inverters, and heavy-duty traction applications. It’s not just a component; it’s a cornerstone for building more compact, efficient, and durable power electronics.
Technical Deep Dive: The Engineering Behind the FZ2400R12KL4C
Two core technological advancements set the FZ2400R12KL4C apart from conventional solutions, directly addressing the critical challenges of thermal management and energy loss in high-current environments.
- Advanced IGBT4 Trench Field-Stop Technology: At its heart, this module utilizes Infineon’s proven IGBT4 Trench Field-Stop chip technology. Unlike older planar structures, this design significantly reduces the collector-emitter saturation voltage (Vce(sat)). Application Value: Lower Vce(sat) directly translates to reduced conduction losses, meaning less energy is wasted as heat. This allows for higher system efficiency, smaller heatsink requirements, and ultimately, a more compact and cost-effective inverter design.
- Superior Thermal Interface Materials: The module integrates an Aluminum Nitride (AlN) ceramic substrate with an Aluminum Silicon Carbide (AlSiC) baseplate. AlN offers exceptional thermal conductivity, efficiently pulling heat away from the IGBT die. The AlSiC baseplate provides an excellent coefficient of thermal expansion (CTE) match to the ceramic, drastically improving power and thermal cycling capabilities. Application Value: This material synergy ensures outstanding heat dissipation and mechanical robustness, enhancing the module's lifetime and reliability, especially in applications with frequent temperature fluctuations like wind turbine pitch control or industrial motor braking. Learn more about the role of AlSiC packaging in modern power modules.
Multi-Dimensional Application Scenarios & Value Proposition
The unique features of the Infineon FZ2400R12KL4C deliver tangible benefits across several demanding sectors:
- Renewable Energy (Wind & Solar Inverters): In utility-scale inverters, every percentage point of efficiency matters. The module's low switching and conduction losses maximize energy harvest. Its enhanced thermal cycling reliability withstands the intermittent nature of renewable sources, reducing maintenance calls and system downtime—a critical factor in IGBTs for wind power.
- High-Power Industrial Drives: For large AC motors in mining, manufacturing, or marine propulsion, the FZ2400R12KL4C delivers the high current needed for massive torque. Its superior thermal management prevents performance derating under heavy loads, ensuring consistent output and protecting the motor from thermal stress.
- Traction & Commercial Vehicles: In main traction inverters or auxiliary power units, power density is key. This module's efficiency allows for smaller, lighter cooling systems, contributing to the overall vehicle's performance and range. Its mechanical ruggedness is essential for enduring the shock and vibration inherent in mobile environments.
- DC-DC Converters & Choppers: The single-switch topology is ideal for high-power DC chopper circuits, such as those used in DC grid applications or large-scale battery charging systems, providing precise and efficient power control.
Key Technical Parameters Overview
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (V_CES) | 1200 V |
| Continuous Collector Current (I_C nom) | 2400 A (@ Tc = 80°C) |
| Collector-Emitter Saturation Voltage (V_CEsat, typ.) | 1.70 V (@ I_C = 2400 A, Tvj = 125°C) |
| Total Switching Energy (E_ts, typ.) | 360 mJ (@ V_CE = 600V, I_C = 2400A) |
| Maximum Junction Temperature (Tvj max) | 150 °C |
| Package Type | IHM-B |
For a comprehensive list of specifications, please Contact Us for a Quote and the full datasheet.
Frequently Asked Questions (FAQ)
- Is this module suitable for parallel operation to achieve higher currents?
Yes. The IGBT4 chips exhibit a positive temperature coefficient for Vce(sat), which facilitates stable current sharing among parallel-connected modules without the risk of thermal runaway. Proper gate drive design and busbar layout are still crucial for optimal performance. - How does the thermal performance of the AlN/AlSiC package compare to standard Al2O3/Copper packages?
The thermal resistance (Rth) is significantly lower due to the high thermal conductivity of AlN. Furthermore, the AlSiC baseplate's CTE is much closer to that of the ceramic substrate compared to copper, which dramatically reduces mechanical stress during temperature changes, leading to a 5-10x improvement in power cycling lifetime.
By integrating cutting-edge chip technology with advanced packaging, the FZ2400R12KL4C provides a robust foundation for next-generation power converters. If you are designing a system that pushes the boundaries of power and efficiency, this IGBT module is an essential building block. Explore More IGBT Modules to discover our full range of power semiconductor solutions.
