#EUPEC, #FZ1200R33KL2, #IGBT_Module, #IGBT, FZ1200R33KL2 Insulated Gate Bipolar Transistor, 2300A I(C), 3300V V(BR)CES,; FZ1200R33KL2
Manufacturer Part Number: FZ1200R33KL2Part Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGManufacturer: Infineon Technologies AGRisk Rank: 5.59Collector Current-Max (IC): 2300 ACollector-Emitter Voltage-Max: 3300 VGate-Emitter Voltage-Max: 20 VNumber of Elements: 3Operating Temperature-Max: 125 °CPower Dissipation-Max (Abs): 14700 WSubcategory: Insulated Gate BIP TransistorsVCEsat-Max: 3.65 V Insulated Gate Bipolar Transistor, 2300A I(C), 3300V V(BR)CES,