Infineon FF600R06ME3 IGBT Module

FF600R06ME3 Datasheet

Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES 600 V 

Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 80°C, Tvj max = 150°C TC = 25°C, Tvj max = 150°C IC nom IC 600A~700A

PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms ICRM 1200A

Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 150 Ptot 1650W

Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VGES +/-20V

TemperaturimSchaltbetrieb Temperatureunderswitchingconditions Tvj op -40~125 °C

Diode,Wechselrichter/Diode,Inverter

PeriodischeSpitzensperrspannung Repetitivepeakreversevoltage Tvj = 25°C VRRM 600 V

Dauergleichstrom ContinuousDCforwardcurrent IF 600 A

PeriodischerSpitzenstrom Repetitivepeakforwardcurrent tP = 1 ms IFRM 1200 A

Grenzlastintegral I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C I²t 18000 A²s

EconoDUAL™3 module with trench/fieldstop IGBT³ and Emitter Controlled 3 diode and NTC