#Infineon, #FF600R07ME4_B11, #IGBT_Module, #IGBT, FF600R07ME4_B11 EconoDUAL™3 module with trench/fieldstop IGBT³ and Emitter Controlled 3 diode and NTC;
FF600R07ME4_B11 Datasheet Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES 650 V Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 80°C, Tvj max = 150°C TC = 25°C, Tvj max = 150°C IC nom IC 600A~700A PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms ICRM 1200A Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 150 Ptot 11800W Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VGES +/-20V TemperaturimSchaltbetrieb Temperatureunderswitchingconditions Tvj op -40~125 °C Diode,Wechselrichter/Diode,Inverter PeriodischeSpitzensperrspannung Repetitivepeakreversevoltage Tvj = 25°C VRRM 600 V Dauergleichstrom ContinuousDCforwardcurrent IF 600 A PeriodischerSpitzenstrom Repetitivepeakforwardcurrent tP = 1 ms IFRM 1200 A Grenzlastintegral I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C I²t 19500 A²s EconoDUAL™3 module with trench/fieldstop IGBT³ and Emitter Controlled 3 diode and NTC EconoDUAL™3 module with trench/fieldstop IGBT³ and Emitter Controlled 3 diode and NTC