#FUJI, #EVG31_050A, #IGBT_Module, #IGBT, EVG31-050A Power Bipolar Transistor, 30A I(C), 600V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin, M201, 5 PIN
Manufacturer Part Number: EVG31-050APart Life Cycle Code: ObsoleteIhs Manufacturer: COLLMER SEMICONDUCTOR INCPackage Description: FLANGE MOUNT, R-PUFM-X5Manufacturer: Fuji Electric Co LtdRisk Rank: 5.82Collector Current-Max (IC): 30 ACollector-Emitter Voltage-Max: 600 VConfiguration: 2 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 100JESD-30 Code: R-PUFM-X5Number of Elements: 2Number of Terminals: 5Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Bipolar Transistor, 30A I(C), 600V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin, M201, 5 PIN