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Fuji 2MBI300U4H-120 IGBT Module

Fuji's 2MBI300U4H-120: a 1200V/300A dual IGBT module. Trench gate tech delivers ultra-low loss and fast switching for superior efficiency and reliability in demanding power designs.

· Categories: IGBT Module
· Manufacturer: Fuji
· Price: US$ 55
· Date Code: 2022+
. Available Qty: 148
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2MBI300U4H-120 Specification

Fuji 2MBI300U4H-120 | High-Efficiency 1200V Dual IGBT for Demanding Power Conversion

The Fuji Electric 2MBI300U4H-120 is a high-performance 1200V, 300A dual IGBT module engineered for superior efficiency and reliability in high-power applications. As part of Fuji's venerable U-Series, this module integrates advanced 4th generation trench gate and field-stop technology to deliver an optimal balance of low conduction losses and fast, soft-switching performance. It is a robust, industry-proven solution designed for system architects seeking to enhance the power density, reduce energy consumption, and improve the operational reliability of their power conversion systems.

  • Low Conduction and Switching Losses: Features a low Vce(sat) and optimized switching characteristics, directly contributing to higher inverter efficiency and reduced thermal load.
  • High-Speed Performance: Engineered for fast switching, making it an excellent choice for applications requiring high-frequency operation and dynamic control.
  • Enhanced Durability: Incorporates a soft recovery free-wheeling diode (FWD) that minimizes voltage surges and EMI, ensuring robust performance under demanding load conditions.
  • Simplified Thermal Design: Built with an isolated baseplate, which facilitates straightforward mounting to a heatsink and improves overall thermal management.

Key Parameters Overview

The technical specifications of the 2MBI300U4H-120 are tailored for high-power industrial applications, providing a solid foundation for robust and efficient system design. For a comprehensive list of parameters, you can Download the Datasheet.

Parameter Value
Max. Collector-Emitter Voltage (Vces) 1200V
Continuous Collector Current (Ic) at Tc=80°C 300A
Collector-Emitter Saturation Voltage (Vce(sat)) at Ic=300A 2.1V (typ)
Maximum Power Dissipation (Pc) 1470W
Maximum Junction Temperature (Tjmax) 150°C

Technical Deep Dive: U-Series Technology

The superior performance of the Fuji 2MBI300U4H-120 is rooted in its advanced U-Series chip technology. By implementing a trench gate structure, Fuji dramatically increased cell density compared to older planar designs. This engineering feat minimizes the channel resistance and virtually eliminates the JFET effect, leading to a significantly lower on-state voltage drop, or VCE(sat). For design engineers, this translates directly into lower conduction losses, less heat generation, and the opportunity to design more compact and energy-efficient systems. For a deeper understanding of IGBT structures, explore our guide on the hybrid structure of IGBTs.

Furthermore, the module is optimized not just for low loss but also for operational robustness. The combination of a thin wafer and refined process technology enables fast turn-off switching, which is critical for reducing switching losses in high-frequency converters. Crucially, this speed is paired with "soft" switching and recovery characteristics in the integrated FWD. This softness mitigates voltage overshoots and reduces electromagnetic interference (EMI), simplifying the design of external snubber circuits and improving overall system reliability.

Application Scenarios & Value Proposition

The specific characteristics of the 2MBI300U4H-120 deliver tangible benefits across a range of demanding industrial applications:

  • Variable Frequency Drives (VFDs): Its high current rating and exceptional thermal performance ensure stable and efficient control of large induction motors, even under heavy or fluctuating load conditions common in industrial automation.
  • AC and DC Servo Drives: In robotics and CNC machining, precision is paramount. The module's fast, clean switching enables the highly dynamic and accurate current control required for high-performance robotic servo drives.
  • Uninterruptible Power Supplies (UPS): For critical infrastructure, reliability is non-negotiable. The module's low power losses maximize battery efficiency during power outages, while its proven durability ensures the long-term dependability required by UPS systems.
  • Welding Power Supplies: The robust construction and ability to handle high-power pulses make it a suitable component for industrial welding equipment, where precise power delivery is key to quality.

Expert Answers to Your Engineering Questions

To further support your design process, our experts have addressed some common questions about implementing the Fuji 2MBI300U4H-120.

1. How does the isolated baseplate benefit my design?
The integrated isolation layer simplifies the mechanical and thermal design of your system. It allows the module to be mounted directly onto a common heatsink with other components without the need for additional, often thermally inefficient, insulating pads. This reduces assembly complexity, lowers the overall thermal resistance, and enhances cooling performance.

2. Can the 2MBI300U4H-120 be paralleled for higher current requirements?
Yes, this module is well-suited for parallel operation. Its positive temperature coefficient of VCE(sat) ensures that as a chip heats up, its on-state voltage increases, naturally promoting balanced current sharing among parallel modules. However, achieving reliable performance requires meticulous attention to a symmetrical PCB layout and a robust gate drive circuit to minimize stray inductances and ensure simultaneous switching. For detailed best practices, refer to this guide on IGBT Paralleling.

3. What is the recommended gate drive strategy for this module?
For optimal performance and reliability, a gate voltage of +15V for turn-on is standard. For turn-off, a negative voltage between -8V and -15V is strongly recommended. This negative bias provides a solid buffer against the Miller effect, preventing parasitic turn-on events caused by high dv/dt during switching, which is crucial for system reliability. Implementing these robust gate drive design tips is essential to prevent catastrophic failures.

For inquiries about pricing, availability, or technical support for the 2MBI300U4H-120 and other IGBT modules, please contact our technical team.

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