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IXYS  20WB60

  • 20WB60
  • 20WB60 Insulated Gate Bipolar Transistor, 29A I(C), 600V V(BR)CES, N-Channel, MINI PACKAGE-23; 20WB60

    · Categories: IGBT
    · Manufacturer: IXYS 
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 912
    MOQ: 1 PC
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    Content last revised on May 29, 2023

    Manufacturer Part Number: MIAA20WB600TMHPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPackage Description: MINI PACKAGE-23Pin Count: 23Manufacturer: IXYS CorporationRisk Rank: 5.84Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 29 ACollector-Emitter Voltage-Max: 600 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X23Number of Elements: 7Number of Terminals: 23Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 100 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 29A I(C), 600V V(BR)CES, N-Channel, MINI PACKAGE-23

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