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Diodes 2DB1182Q-13

  • 2DB1182Q-13

2DB1182Q-13 Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, GREEN, PLASTIC PACKAGE-3/2; 2DB1182Q-13

· Categories: IGBT
· Manufacturer: Diodes
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 2053
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Content last revised on May 27, 2023

Manufacturer Part Number: 2DB1182Q-13Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: DIODES INCPackage Description: SMALL OUTLINE, R-PSSO-G2ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 1.7Additional Feature: HIGH RELIABILITYCase Connection: COLLECTORCollector Current-Max (IC): 2 ACollector-Emitter Voltage-Max: 32 VConfiguration: SINGLEDC Current Gain-Min (hFE): 120JEDEC-95 Code: TO-252JESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: PNPPower Dissipation-Max (Abs): 10 WReference Standard: AEC-Q101Subcategory: Other TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, GREEN, PLASTIC PACKAGE-3/2