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Fuji 2DI50M-050

  • 2DI50M-050
  • 2DI50M-050 Power Bipolar Transistor, 50A I(C), 600V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin; 2DI50M-050

    · Categories: IGBT
    · Manufacturer: Fuji
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 1203
    MOQ: 1 PC
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    Content last revised on June 27, 2023

    Manufacturer Part Number: 2DI50M-050Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPackage Description: FLANGE MOUNT, R-PUFM-X7Manufacturer: Fuji Electric Co LtdRisk Rank: 5.82Collector Current-Max (IC): 50 ACollector-Emitter Voltage-Max: 600 VConfiguration: COMPLEXDC Current Gain-Min (hFE): 750JESD-30 Code: R-PUFM-X7Number of Elements: 2Number of Terminals: 7Operating Temperature-Max: 125 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNPower Dissipation Ambient-Max: 310 WQualification Status: Not QualifiedSubcategory: BIP General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICONTurn-off Time-Max (toff): 11000 nsTurn-on Time-Max (ton): 3000 ns Power Bipolar Transistor, 50A I(C), 600V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin

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