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FUJI 2DI75A-120

  • 2DI75A-120
  • 2DI75A-120 FUJI Power Bipolar Transistor, 75A 1200V, 1-Element

    · Categories: IGBT
    · Manufacturer: FUJI
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 297
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    Content last revised on November 18, 2024

    Manufacturer Part Number: 2DI75A120
    Features
    1200 volts class power transistor modules
    Power transistors and free wheels are built into one package.
    All terminals are insulated from mounting plate.
    Best suited for motor control applications with 440 to 480 V AC inputs and power supplies.
    Terminal layout in which drive wiring and power wiring do not come across.

    Maximum ratings (Tc=25°C unless without specified)
    Collector-Emitter voltage Vces:1200V
    Gate-Emitter voltage VGES:±20V
    Collector current Ic Continuous Tc=25°C :75A
    Collector current Icp 1ms Tc=25°C :150A
    Collector power dissipation Pc:500W
    Isolation Voltage VIsol (AC 1 minute) :3400V
    Operating junction temperature Tj:+150°C
    Storage temperature Tstg :-40 to +125°C
    Mounting screw torque 3.5 *3 N·m

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