#Fuji, #2MBI50F_060, #IGBT_Module, #IGBT, 2MBI50F-060 Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, M218, 7 PIN; 2MBI50F-060
Manufacturer Part Number: 2MBI50F-060Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPackage Description: FLANGE MOUNT, R-XUFM-X7Pin Count: 7Manufacturer: Fuji Electric Co LtdRisk Rank: 5.84Case Connection: ISOLATEDCollector Current-Max (IC): 50 ACollector-Emitter Voltage-Max: 600 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEFall Time-Max (tf): 1000 nsJESD-30 Code: R-XUFM-X7Number of Elements: 2Number of Terminals: 7Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 440 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONVCEsat-Max: 2.5 V Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, M218, 7 PIN