Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors
Designed primarily for half-wave ac control applications, such as motor controls,heating controls and power supplies.
•Glass Passivated Junctions with Center Gate Geometry for Greater ParameterUniformity and Stability
•Small, Rugged, Thermowatt Construction for Low Thermal Resistance, HighHeat Dissipation and Durability
•Blocking Voltage to 800 Volts
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Peak Repetitive Forward and Reverse Blocking Voltage (Gate Open, TJ = –40 to 125°C) VRRM 800V
RMS On–State Current (TC = 90°C) (All Conduction Angles) IT(RMS) 12Amps
Peak Non-Repetitive Surge Current(1/2 Cycle, Sine Wave, 60 Hz, TJ = 125°C) ITSM 100Amps
Circuit Fusing (t = 8.3 ms) I2t 40 A2s
Forward Peak Power PGM 20Watts
Forward Average Gate Power PG(AV) 0.5Watt
Forward Peak Gate Current IGM 2Amps
Operating Junction Temperature Range TJ-40 to +125°C
Storage Temperature Range Tstg-40 to +150°C
