#ON , #2N6491G, #IGBT_Module, #IGBT, 2N6491G Power Bipolar Transistor, NPN, 80 V, 15 A, TO-220 3 LEAD STANDARD, 50-TUBE; 2N6491G
Manufacturer Part Number: 2N6491GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPart Package Code: TO-220ABPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3Manufacturer Package Code: 221A-09ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 0.61Additional Feature: LEADFORM OPTIONS ARE AVAILABLECase Connection: COLLECTORCollector Current-Max (IC): 15 ACollector-Emitter Voltage-Max: 80 VConfiguration: SINGLEDC Current Gain-Min (hFE): 5JEDEC-95 Code: TO-220ABJESD-30 Code: R-PSFM-T3JESD-609 Code: e3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): 260Polarity/Channel Type: PNPPower Dissipation-Max (Abs): 30 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: NOTerminal Finish: Tin (Sn)Terminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Bipolar Transistor, NPN, 80 V, 15 A, TO-220 3 LEAD STANDARD, 50-TUBE