Fairchild Semiconductor 2N7000_D26Z IGBT Module

Manufacturer Part Number: 2N7000_D26ZRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: CYLINDRICAL, O-PBCY-T3ECCN Code: EAR99HTS Code: 8541.21.00.95Manufacturer: ON SemiconductorRisk Rank: 0.53Configuration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 60 VDrain Current-Max (Abs) (ID): 0.2 ADrain Current-Max (ID): 0.2 ADrain-source On Resistance-Max: 5 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 5 pFJEDEC-95 Code: TO-92JESD-30 Code: O-PBCY-T3Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: ROUNDPackage Style: CYLINDRICALPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 0.4 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: BOTTOMTime Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92