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ON  2N7000BU

  • 2N7000BU

2N7000BU Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; 2N7000BU

· Categories: IGBT
· Manufacturer: ON 
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 724
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Content last revised on August 25, 2023

Manufacturer Part Number: 2N7000BURohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: ON SEMICONDUCTORECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 1.69Configuration: SingleDrain Current-Max (Abs) (ID): 0.2 AFET Technology: METAL-OXIDE SEMICONDUCTOROperating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 0.4 WSubcategory: FET General Purpose PowerSurface Mount: NO Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET