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ROHM 2SB1188T100R IGBT Module

2SB1188T100R ROHM Medium power transistor PNP 32V 2A SO-89

· Categories: IGBT Module
· Manufacturer: ROHM
· Price: US$
· Date Code: 2025+
. Available Qty: 3600
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2SB1188T100R Specification

Manufacturer: Rohm Semiconductor

Product Category: Bipolar Transistors - BJT

RoHS:  Details

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Configuration: Single

Collector- Emitter Voltage VCEO Max: - 32 V

Collector- Base Voltage VCBO: - 40 V

Emitter- Base Voltage VEBO: - 5 V

Maximum DC Collector Current: 2 A

Gain Bandwidth Product fT: 100 MHz

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 150 C

DC Current Gain hFE Max: 390

Height: 1.5 mm

Length: 4.5 mm

Packaging: Cut Tape

Packaging: MouseReel

Packaging: Reel

Width: 2.5 mm

Brand: ROHM Semiconductor

Continuous Collector Current: - 2 A

DC Collector/Base Gain hfe Min: 82

Pd - Power Dissipation: 500 mW (1/2 W)

Product Type: BJTs - Bipolar Transistors

Factory Pack Quantity: 1000

Subcategory: Transistors

Unit Weight: 0.004603 oz

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