Features
1) Low VCE(sat).VCE(sat)͟ 0.5V (IC / IB= 0.5A / 50mAͅ)
2) IC = 0.8A.
3) Complements the 2SD1781K.
Structure
Epitaxial planar type
PNP silicon transistor
Absolute maximum ratings (Ta=25qC)
Collector-base voltage VCBo 40V
Collector-emitter voltage VCEO 32V
Emitter-base voltage VEBO 5V
Collector current Ic 0.8A
Collector power dissipation Pc 0.2A
Junction temperature Tj 150°C
Storage temperature Tstg -55~+150°C
