ON　 2SC3649S-TD-E IGBT Module

Manufacturer Part Number: 2SC3649S-TD-EBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PSSO-F3Pin Count: 3Manufacturer Package Code: 419AUECCN Code: EAR99HTS Code: 8541.21.00.75Manufacturer: ON SemiconductorRisk Rank: 1.04Case Connection: COLLECTORCollector Current-Max (IC): 1.5 ACollector-Emitter Voltage-Max: 160 VConfiguration: SINGLEDC Current Gain-Min (hFE): 140JEDEC-95 Code: TO-243AAJESD-30 Code: R-PSSO-F3JESD-609 Code: e6Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPolarity/Channel Type: NPNSurface Mount: YESTerminal Finish: Tin/Bismuth (Sn/Bi)Terminal Form: FLATTerminal Position: SINGLETransistor Element Material: SILICONTransition Frequency-Nom (fT): 120 MHz Bipolar Transistor, 160V, 1.5A, Low VCE(sat), (PNP)NPN Single PCP hFE = 140-280, SOT-89 / PCP-1, 1000-REEL