#Sanken, #2SD2389, #IGBT_Module, #IGBT, 2SD2389 Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-100, TO-3P,
Manufacturer Part Number: 2SD2389Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: SANKEN ELECTRIC CO LTDPart Package Code: TO-3PPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3ECCN Code: EAR99Manufacturer: Sanken Electric Co LtdRisk Rank: 1.69Additional Feature: BUILT-IN BIAS RESISTORCollector Current-Max (IC): 8 ACollector-Emitter Voltage-Max: 150 VConfiguration: DARLINGTON WITH BUILT-IN RESISTORDC Current Gain-Min (hFE): 5000JESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 80 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT-100, TO-3P, 3 PIN