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ABB 5SNA1200G330100

  • 5SNA1200G330100

5SNA1200G330100 Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES, N-Channel, HIPAK-9; 5SNA1200G330100

· Categories: IGBT
· Manufacturer: ABB
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 83
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Content last revised on May 27, 2023

Manufacturer Part Number: 5SNA1200G330100Part Life Cycle Code: ActiveIhs Manufacturer: ABB LTDPackage Description: FLANGE MOUNT, R-XUFM-X9Pin Count: 9Manufacturer: ABB SemiconductorsRisk Rank: 5.73Case Connection: ISOLATEDCollector Current-Max (IC): 1200 ACollector-Emitter Voltage-Max: 3300 VConfiguration: COMPLEXJESD-30 Code: R-XUFM-X9Number of Elements: 3Number of Terminals: 9Operating Temperature-Max: 125 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Nom (toff): 1770 nsTurn-on Time-Nom (ton): 730 ns Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES, N-Channel, HIPAK-9