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FUJI 6MBI75F-060

  • 6MBI75F-060
  • 6MBI75F-060 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, M616, 19 PIN; 6MBI75F-060

    · Categories: IGBT
    · Manufacturer: FUJI
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 306
    MOQ: 1 PC
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    Content last revised on August 19, 2023

    Manufacturer Part Number: 6MBI75F-060Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPackage Description: FLANGE MOUNT, R-XUFM-X19Pin Count: 19Manufacturer: Fuji Electric Co LtdRisk Rank: 5.84Collector Current-Max (IC): 75 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEFall Time-Max (tf): 1000 nsJESD-30 Code: R-XUFM-X19Number of Elements: 6Number of Terminals: 19Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 1740 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONVCEsat-Max: 2.5 V Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, M616, 19 PIN

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