#APT, #APT150GN120JDQ4, #IGBT_Module, #IGBT, APT150GN120JDQ4 Insulated Gate Bipolar Transistor, 215A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4; APT15
Manufacturer Part Number: APT150GN120JDQ4Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPart Package Code: ISOTOPPackage Description: FLANGE MOUNT, R-PUFM-X4Pin Count: 4Manufacturer Package Code: ISOTOPECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 2.2Additional Feature: LOW CONDUCTION LOSS, HIGH RELIABILITY, UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 215 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 30 VJESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 625 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 215A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4