#Microsemi Power Products Group, #APT25GT120BRDLG, #IGBT_Module, #IGBT, APT25GT120BRDLG Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, TO-247
Manufacturer Part Number: APT25GT120BRDLGPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPart Package Code: TO-247ADPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3Manufacturer: Microsemi CorporationRisk Rank: 5.04Case Connection: COLLECTORCollector Current-Max (IC): 54 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Thr Voltage-Max: 6.5 VGate-Emitter Voltage-Max: 30 VJEDEC-95 Code: TO-247ADJESD-30 Code: R-PSFM-T3JESD-609 Code: e1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 347 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN