#APT, #APT50GT120JRDQ2, #IGBT_Module, #IGBT, APT50GT120JRDQ2 Insulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel, ISOTOP-4; APT50GT120JRDQ2
Manufacturer Part Number: APT50GT120JRDQ2Pbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: MICROSEMI CORPPart Package Code: ISOTOPPackage Description: FLANGE MOUNT, R-PUFM-X4Pin Count: 4Manufacturer Package Code: ISOTOPManufacturer: Microsemi CorporationRisk Rank: 5.57Additional Feature: UL RECOGNIZED, HIGH RELIABILITYCase Connection: ISOLATEDCollector Current-Max (IC): 72 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 30 VJESD-30 Code: R-PUFM-X4JESD-609 Code: e1Number of Elements: 1Number of Terminals: 4Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 379 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel, ISOTOP-4