#Microsemi Power Products Group, #APTCV90TL12T3G, #IGBT_Module, #IGBT, APTCV90TL12T3G Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-32; APTCV9
Manufacturer Part Number: APTCV90TL12T3GRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPackage Description: FLANGE MOUNT, R-XUFM-X32Pin Count: 32Manufacturer: Microsemi CorporationRisk Rank: 5.73Case Connection: ISOLATEDCollector Current-Max (IC): 80 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X32Number of Elements: 4Number of Terminals: 32Operating Temperature-Max: 175 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 280 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-32