#Microsemi Power Products Group, #APTGF180H60G, #IGBT_Module, #IGBT, APTGF180H60G Insulated Gate Bipolar Transistor, 220A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP6, MODULE-12; APT
Manufacturer Part Number: APTGF180H60GPbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: MICROSEMI CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X12Pin Count: 12ECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 7.66Case Connection: ISOLATEDCollector Current-Max (IC): 220 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X12JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 4Number of Terminals: 12Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 833 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 220A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP6, MODULE-12